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AW3112 PNP NMOSFET

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Description

AW3112 Feb 2019 V1.2 30V/3A PNP Low VCESAT BJT, Integrated with 20V Trench NMOSFET .
l. Low collector-emitter saturation voltage. Large current capability. High current gain. DFN2mm×2mm-6L Package tia The AW3112.

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Datasheet Specifications

Part number
AW3112
Manufacturer
AWINIC
File Size
868.23 KB
Datasheet
AW3112-AWINIC.pdf
Description
PNP NMOSFET

Applications

* Battery Charging Portable Device Power Management application. e AW3112 is available in DFN2mm×2mm×0.75mm- 6L package. It is specified among the industrial fid temperature range of -40℃ and +85℃ PIN CONFIGURATION AND MARKING n AW3112DNR Top View (DFN2×2-6L) o 6(C) 5(C) 4(S) AW3112DNR Marking

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