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AP10N70I-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP10N70I-A Description

AP10N70I-A RoHS-compliant Product Advanced Power Electronics Corp.▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

AP10N70I-A Applications

* G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 ± 30 10 6.8 40 31.3 2 Units V

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Datasheet Details

Part number
AP10N70I-A
Manufacturer
Advanced Power Electronics
File Size
203.12 KB
Datasheet
AP10N70I-A-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP10N70I-A-like datasheet