AP18N20GI N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP18N20GI RoHS-compliant Product Advanced Power Electronics Corp.▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-C.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

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Datasheet Specifications

Part number: AP18N20GI
Manufacturer: Advanced Power Electronics
File Size: 151.47 KB
Datasheet: AP18N20GI-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 200 ±20 18 9.5 60 34.7 0.28 -55 to 150 -

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AP18N20GI N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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