AP18T10GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP18T10GH/J RoHS-compliant Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic G .
G Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and.

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Datasheet Specifications

Part number: AP18T10GJ
Manufacturer: Advanced Power Electronics
File Size: 154.56 KB
Datasheet: AP18T10GJ_AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18T10GJ) are available for low-profile applications. D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage G

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AP18T10GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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