AP18T10GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP18T10GP RoHS-compliant Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic G N.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

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Datasheet Specifications

Part number: AP18T10GP
Manufacturer: Advanced Power Electronics
File Size: 90.59 KB
Datasheet: AP18T10GP-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10

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AP18T10GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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