AP25G45GEM Datasheet (Advanced Power Electronics) - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP25G45GEM, N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP25G45GEM Pb Free Plating Product Advanced Power Electronics Corp.

▼ High Input Impedance ▼ High Pick Current Capability ▼ 4.5V Gate Drive ▼ Strobe Flash Applications C C C C N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCE ICP 450V 150A C G E G E SO-8 E E Absolute Maximum Ratings Symbol VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Parameter Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Storage Temperature Range Oper