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AP25G04GD 40V N+P-Channel Enhancement Mode MOSFET

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Description

AP25G04GD 40V N+P-Channel Enhancement Mode MOSFET .
The AP25G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number
AP25G04GD
Manufacturer
APM
File Size
1.48 MB
Datasheet
AP25G04GD-APM.pdf
Description
40V N+P-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. 2 AP25G04GD RVE1.0 AP25G04GD 40V N+P-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Conditions Min. Typ. BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coeffici

AP25G04GD Distributors

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40V N +P-Channel Enhancement Mode MOSFET APM
APM AP25G04GD-like datasheet