AP20G02BDF Datasheet - APM

AP20G02BDF, 20V N+P-Channel Enhancement Mode MOSFET

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AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET The AP20G02BDF uses advanced Trench III technology to provide excellent RDS(ON), low gate charge.

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AP20G02BDF-APM.pdf

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Datasheet Details

Part number:

AP20G02BDF

Manufacturer:

APM

File Size:

1.35 MB

Description:

20V N+P-Channel Enhancement Mode MOSFET

Features

* VDS = 20V ID =20A RDS(ON)

Applications

* , should be limited by total power dissipation. 2 AP20G02BDF REV1.1 AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET P-Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= -250μA

AP20G02BDF Distributors

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AP20G02BDF 20V N +P-Channel Enhancement Mode MOSFET APM

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