AP20G04GD Datasheet - APM

AP20G04GD, 40V N+P-Channel Enhancement Mode MOSFET

AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET .
The AP20G04GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

datasheet Preview Page 1 from Datasheet4u.com

AP20G04GD-APM.pdf

AP20G04GD Datasheet Preview — Preview of AP20G04GD PDF

Datasheet Details

Part number:

AP20G04GD

Manufacturer:

APM

File Size:

1.83 MB

Description:

40V N+P-Channel Enhancement Mode MOSFET

Features

* VDS = 40V ID =20A RDS(ON) < 32mΩ @ VGS=10V （Type：24mΩ） VDS = -40V ID = -18A RDS(ON)

Applications

* , should be limited by total power dissipation. 2 AP20G04GD RVE1.0 AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperatur

AP20G04GD Distributors

📁 Related Datasheet

AP20G45EH AP20G45EJ AP20GT60ASI-HF AP20GT60ASP-HF AP20GT60I AP20GT60P-HF

📌 All Tags

AP20G04GD 40V N +P-Channel Enhancement Mode MOSFET APM

APM AP20G04GD-like datasheet