AP20G03BDF - 30V N+P-Channel Enhancement Mode MOSFET
AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET The AP20G03BDF uses advanced Trench III technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Fe
AP20G03BDF Features
* VDS = 30V ID =20A RDS(ON)
