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AP2R803GS-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2R803GS-HF Description

Advanced Power Electronics Corp.AP2R803GS-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Re.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low. on- resistan.

AP2R803GS-HF Applications

* using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID G DS 30V 2.8mΩ 80A TO-263(S) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP2R803GS-HF-like datasheet