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AP2R803GS-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The AP2R803GS-HF by Advanced Power Electronics is a N-CHANNEL ENHANCEMENT MODE POWER MOSFET. Below is the official datasheet preview.

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Official preview page of the AP2R803GS-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET datasheet (Advanced Power Electronics).

Datasheet Details

Part number AP2R803GS-HF
Manufacturer Advanced Power Electronics
File Size 117.89 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP2R803GS-HF-AdvancedPowerElectronics.pdf
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AP2R803GS-HF Product details

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness.The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.BVDSS RDS(ON) ID G DS 30V 2.8mΩ 80A TO-263(S) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@T

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