AP3310GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP3310GH/J RoHS-compliant Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capability www.DataSheet4U.com P-CHA.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: AP3310GH
Manufacturer: Advanced Power Electronics
File Size: 203.67 KB
Datasheet: AP3310GH_AdvancedPowerElectronics.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - 20 ± 12 -10 -6.2 -24 15.6

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AP3310GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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