AP4500GM-HF
Description
AP4500 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
20V 30mΩ
6A -20V 50mΩ -5A
D2
The SO-8 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
G1
G2 S1
S2
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
20 -20 V
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+12 +12 6 -5 4.8 -4 20 -20 2.0 0.016
V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating...
