AP4501SD datasheet by Advanced Power Electronics Corp.
| Part number | AP4501SD |
|---|---|
| Datasheet | AP4501SD_AdvancedPowerElectronics.pdf |
| File Size | 154.63 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. Value 62.5 Unit ℃/W Data and specifications subject to change without notice 200221031 .. AP4501SD N-CH @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
View all Advanced Power Electronics Corp datasheets
| Part Number | Description |
|---|---|
| AP4501SM | POWER MOSFET |
| AP4501SSD | N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4501AGEM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4501AGEY-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4501AGM | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4501AGM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4501GD | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4501GM | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4501GM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4501GSD | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
