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AP4501SSD - N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the design with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

AP4501SSD included N , P channel enhancement mode power MOSFET and Shottky diode.

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www.DataSheet4U.com AP4501SSD Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching D1 D1 D2 D2 N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 30V 36mΩ 5.3A -30V 60mΩ -4.2A K PDIP-8 G1 S1/A S2 P-CH BVDSS RDS(ON) ID D1 Description The Advanced Power MOSFETs from APEC provide the design with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. AP4501SSD included N , P channel enhancement mode power MOSFET and Shottky diode.