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AP4501SSD Datasheet N With Schottky And P-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: .. AP4501SSD Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching D1 D1 D2 D2 N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 30V 36mΩ 5.3A -30V 60mΩ -4.

General Description

The Advanced Power MOSFETs from APEC provide the design with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

AP4501SSD included N , P channel enhancement mode power MOSFET and Shottky diode.

G1 D2 G2 S1 A S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 5.3 4.3 40 2 0.016 -55 to 150 -55 to 125 P-channel -30 ±20 -4.2 -3.5 -30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max.

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