AP4880GEM N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP4880GEM Pb Free Plating Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Low On-resistance ▼ R.
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistanc.

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Datasheet Specifications

Part number: AP4880GEM
Manufacturer: Advanced Power Electronics
File Size: 130.98 KB
Datasheet: AP4880GEM-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 25 ±16 14 11 50 2.5 0.02 -55 to 1

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AP4880GEM N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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