Part number:
AP50G60SW
Manufacturer:
Advanced Power Electronics
File Size:
91.84 KB
Description:
N-channel insulated gate bipolar transistor.
* ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode G C E C VCES IC TO-3P G Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=25oC IF@TC=100oC PD@TC=25oC TSTG TJ TL Collector-Emitter Voltage Gate-Emitter
AP50G60SW Datasheet (91.84 KB)
AP50G60SW
Advanced Power Electronics
91.84 KB
N-channel insulated gate bipolar transistor.
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