AP50G03GD Datasheet (APM) - 30V N+P-Channel Enhancement Mode MOSFET

AP50G03GD, 30V N+P-Channel Enhancement Mode MOSFET

AP50G03GD 30V N+P-Channel Enhancement Mode MOSFET The AP50G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General Fea

AP50G03GD Features

* VDS = 30V ID =52A RDS(ON) < 10mΩ @ VGS=10V （Type：7.2mΩ） Only VDS = -30V ID =-48A RDS(ON) < 13mΩ @ VGS=-10V （Type：8.8mΩ） Use Application BLDC times eng Package Marking and Ordering Information Product ID Pack Marking sh AP50G03GD TO-252-4L AP50G03GD XXX YYYY ng Absolute Maximum Ratings (