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AP50G03GD

30V N+P-Channel Enhancement Mode MOSFET

AP50G03GD Features

* VDS = 30V ID =52A RDS(ON) < 10mΩ @ VGS=10V （Type：7.2mΩ） Only VDS = -30V ID =-48A RDS(ON) < 13mΩ @ VGS=-10V （Type：8.8mΩ） Use Application BLDC times eng Package Marking and Ordering Information Product ID Pack Marking sh AP50G03GD TO-252-4L AP50G03GD XXX YYYY ng Absolute Maximum Ratings (

AP50G03GD General Description

AP50G03GD 30V N+P-Channel Enhancement Mode MOSFET The AP50G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Fea.

AP50G03GD Datasheet (1.51 MB)

Preview of AP50G03GD PDF

Datasheet Details

Part number:

AP50G03GD

Manufacturer:

APM

File Size:

1.51 MB

Description:

30v n+p-channel enhancement mode mosfet.

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AP50G03GD 30V N +P-Channel Enhancement Mode MOSFET APM

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