AP50H02DF3 - 20V N+N-Channel Enhancement Mode MOSFET
AP50H02DF3 20V N+N-Channel Enhancement Mode MOSFET The AP50H02DF3 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Featu
AP50H02DF3 Features
* VDS = 20V ID =50A RDS(ON) < 8.5mΩ @ VGS=4.5V （Type：6.2mΩ） Application 3.3V MCU Drive Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP50H02DF3 DFN3
* 3-8L Marking AP50H02DF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise note
