AP60L02H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP60L02H/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement D ▼ Fast Switchin.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as D.

📥 Download Datasheet

AP60L02H Datasheet Preview — Preview of AP60L02H PDF

Datasheet Specifications

Part number: AP60L02H
Manufacturer: Advanced Power Electronics
File Size: 79.74 KB
Datasheet: AP60L02H-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02J) is available for low-profile applications. BVDSS RDS(ON) ID 25V 12mΩ 50A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Vol

AP60L02H Distributors

📁 Related Datasheet

AP6000 AP6001 AP6002 AP6003 AP6004 AP601

📌 All Tags

AP60L02H N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Advanced Power Electronics AP60L02H-like datasheet