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AP83T03AGH-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Description

Advanced Power Electronics Corp.AP83T03AGH-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive R.
AP83T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching.

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Datasheet Specifications

Part number
AP83T03AGH-HF
Manufacturer
Advanced Power Electronics
File Size
56.42 KB
Datasheet
AP83T03AGH-HF-AdvancedPowerElectronics.pdf
Description
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Applications

* The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA

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