AP83T03GJB N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP83T03GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requ.
AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching.

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Datasheet Specifications

Part number: AP83T03GJB
Manufacturer: Advanced Power Electronics
File Size: 59.70 KB
Datasheet: AP83T03GJB-AdvancedPowerElectronics.pdf
Description: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Applications

* The TO-251S short lead package is preferred for all commercial-industrial through-hole applications without leadcutted. BVDSS RDS(ON) ID 30V 6mΩ 75A GD S TO-251S(JB) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol . Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM

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AP83T03GJB N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics

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