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AP83T03GM-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Description

Advanced Power Electronics Corp.AP83T03GM-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance ▼ Simple Drive Requ.
AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching.

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Datasheet Specifications

Part number
AP83T03GM-HF
Manufacturer
Advanced Power Electronics
File Size
63.04 KB
Datasheet
AP83T03GM-HF-AdvancedPowerElectronics.pdf
Description
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Applications

* The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G 30V 6mΩ 16A D S Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Param

AP83T03GM-HF Distributors

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Advanced Power Electronics AP83T03GM-HF-like datasheet