AP85L02H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP85L02H/J Advanced Power Electronics Corp.N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching D.
G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications s.

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Datasheet Specifications

Part number: AP85L02H
Manufacturer: Advanced Power Electronics
File Size: 77.91 KB
Datasheet: AP85L02H-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85L02J) is available for low-profile applications. BVDSS RDS(ON) ID 25V 6mΩ 85A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Volt

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AP85L02H N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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