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AP85L02J, AP85L02H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP85L02J Description

AP85L02H/J Advanced Power Electronics Corp.N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching D.
G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications s.

AP85L02J Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85L02J) is available for low-profile applications. BVDSS RDS(ON) ID 25V 6mΩ 85A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Volt

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This datasheet PDF includes multiple part numbers: AP85L02J, AP85L02H. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AP85L02J, AP85L02H
Manufacturer
Advanced Power Electronics
File Size
77.91 KB
Datasheet
AP85L02H-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: AP85L02J, AP85L02H.
Please refer to the document for exact specifications by model.

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP85L02J-like datasheet