APT10050JLC Datasheet - Advanced Power Technology

APT10050JLC MOSFET

APT10050JLC 1000V 19A S G D 0.500Ω S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. Lower Gate Charge Faster Switching 100% Avalanche Tested MAXIMUM RATINGS Symbol VDSS ID IDM VG.

APT10050JLC_AdvancedPowerTechnology.pdf