* Low Forward Voltage Drop
* Low Tail Current
* Integrated Gate Resistor Low EMI, High Reliability
* RoHS Compliant Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended f
APT100GT120JRDQ4 Datasheet (1.07 MB)
APT100GT120JRDQ4
Microsemi ↗ Corporation
1.07 MB
Thunderbolt igbt.
APT100GT120JRDQ4 1200V, 100A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using N.
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