APT1001R1AVR Datasheet, MOSFET, Advanced Power Technology

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APT1001R1AVR

Manufacturer:

Advanced Power Technology

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📄 Datasheet

Description:

Mosfet.

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APT1001R1AVR

Advanced Power Technology

📁 Related Datasheet

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D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1.

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APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE.

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D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1.

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Typical Performance Curves APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL 1000V 8A 1.60Ω D3PAK POWER MOS 7 ® R FREDFET TO-247 Power MOS 7 is a .

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D TO-247 G S APT1001R6BN 1000V 8.0A 1.60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT10.

APT1001R6SFLL - POWER MOS 7 R FREDFET (Advanced Power Technology)
Typical Performance Curves APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL 1000V 8A 1.60Ω D3PAK POWER MOS 7 ® R FREDFET TO-247 Power MOS 7 is a .

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APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channe.

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D TO-247 G S APT1001RBN 1000V 11.0A 1.00Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT50.

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APT1001RBVR 1000V 11A 1.000Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno.