APT1001R6BN
APT1001R6BN is MOSFET manufactured by Advanced Power Technology.
TO-247
APT1001R6BN 1000V 8.0A 1.60Ω
®
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1002R4BN 1000V 6.5A 2.40Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1001R6BN APT 1002R4BN UNIT Volts Amps
- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1000 8 32 ±30 240 1.96
1000 6.5 26
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
Volts Watts W/°C °C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic /...
