APT1001R1BN Overview
TC = 25°C unless otherwise specified. 0.063" from Case for 10 Sec. These Devices are Sensitive to Electrostatic Discharge.
| Part number | APT1001R1BN |
|---|---|
| Datasheet | APT1001R1BN_AdvancedPowerTechnology.pdf |
| File Size | 52.10 KB |
| Manufacturer | Advanced Power Technology |
| Description | MOSFET |
|
|
|
TC = 25°C unless otherwise specified. 0.063" from Case for 10 Sec. These Devices are Sensitive to Electrostatic Discharge.
See all Advanced Power Technology datasheets
| Part Number | Description |
|---|---|
| APT1001R1BVFR | MOSFET |
| APT1001R1AVR | MOSFET |
| APT1001R1HVR | MOSFET |
| APT1001R3BN | MOSFET |
| APT1001R6BFLL | POWER MOS 7 R FREDFET |
| APT1001R6BN | MOSFET |
| APT1001R6SFLL | POWER MOS 7 R FREDFET |
| APT1001RBLC | MOSFET |
| APT1001RBN | MOSFET |
| APT1001RBVR | MOSFET |