APT1001R1BN
APT1001R1BN is MOSFET manufactured by Advanced Power Technology.
TO-247
APT1001R1BN 1000V 10.5A 1.10Ω
®
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1001R3BN 1000V 10.0A 1.30Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1001RBN APT 1001R3BN UNIT Volts Amps
- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1000 10.5 42 ± 30 310 2.48
1000 10 40
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
Volts Watts W/°C °C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS...
