Advanced Power Technology APT1001R1BN
MOSFET
| Part No. | APT1001R1BN |
|---|---|
| Datasheet | APT1001R1BN Download |
| Manufacturer |  Advanced Power Technology |
| Description | MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1001R3BN 1000V 10.0A 1.30Ω All Ratings: TC = 25°C unless otherwise specified. APT 1001RBN APT 1001R3BN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 10.5 42 ± 30 310 2.48 1000 10 40 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 Volts Watts W/°C °C -55 to 150 300 STATICELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN APT1001R1BN APT1001R3BN APT1001R1BN APT1001R3BN APT1001R1BN APT1001R3BN TYP MAX UNIT Volts 1000 1000 10.5 Amps ID(ON) (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current...
