APT1001R1HVR
APT1001R1HVR is MOSFET manufactured by Advanced Power Technology.
1000V 9A 1.100Ω
POWER MOS V ®
TO-258
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
V®
- Faster Switching
- Lower Leakage
- 100% Avalanche Tested
- Popular TO-258 Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
All Ratings: TC = 25°C unless otherwise specified.
APT1001R1HVR UNIT Volts Amps
1000 9 36 ±30 ±40 200 1.6 -55...
