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APT1001R1BVFR
1000V 11A 1.100Ω
POWER MOS V ®
FREDFET
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode • Lower Leakage • Faster Switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
• 100% Avalanche Tested
FREDFET
D G S
• Popular TO-247 Package
All Ratings: TC = 25°C unless otherwise specified.
APT1001R1BVFR UNIT Volts Amps
1000 11 44 ±30 ±40 280 2.
APT1001R1BVFR Datasheet
