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APT1001R1BN Datasheet - Advanced Power Technology

APT1001R1BN MOSFET

D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1001R3BN 1000V 10.0A 1.30Ω All Ratings: TC = 25°C unless otherwise specified. APT 1001RBN APT 1001R3BN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 10.5 42 ± 30 310 2.48 1000 10 40 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Fact.

APT1001R1BN Datasheet (52.10 KB)

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Datasheet Details

Part number:

APT1001R1BN

Manufacturer:

Advanced Power Technology

File Size:

52.10 KB

Description:

Mosfet.

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APT1001R1BN MOSFET Advanced Power Technology

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