APT5010B2VFR - Power MOSFET

Advanced Power Technology

Datasheet Details

Part number	APT5010B2VFR
Manufacturer	Advanced Power Technology
File Size	64.64 KB
Description	Power MOSFET
Datasheet	APT5010B2VFR Datasheet
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APT5010B2VFR 500V 47A 0.100Ω POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • Lower Leakage • Faster Switching • 100% Avalanche Tested D • New T-MAX™ Package (Clip-mounted TO-247 Package) G FREDFET S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT5010B2VFR UNIT Volts Amps 500 47 188 ±30 ±40 520 4.

Published: Apr 23, 2005 |