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APT50M60JN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Part number APT50M60JN
Manufacturer Advanced Power Technology
File Size 60.24 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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D S G D S G S SO 2 T- 27 APT50M60JN 500V 71A 0.06OΩ "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor 1 SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APT 50M60JN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500 71 284 ± 30 690 5.52 -55 to 150 300 and Inductive Current Clamped Volts Watts W/°C °C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
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