APT5518BFLL
Advanced Power Technology
94.26kb
Power mosfet.
TAGS
📁 Related Datasheet
APT5518SFLL - Power MOSFET
(Advanced Power Technology)
APT5518BFLL APT5518SFLL
550V 31A 0.180Ω
POWER MOS 7 R FREDFET
BFLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhanceme.
APT5510JFLL - power MOSFET
(Advanced Power Technology)
APT5510JFLL
550V 44A 0.100Ω
POWER MOS 7 R FREDFET
G S
D
SOT-227 S
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancemen.
APT5010B2 - Power MOSFET
(Advanced Power Technology)
APT5010B2FLL APT5010LFLL
500V 46A 0.100W
POWER MOS 7TM
FREDFET
B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhanc.
APT5010B2FLL - Power MOSFET
(Advanced Power Technology)
APT5010B2FLL APT5010LFLL
500V 46A 0.100Ω
POWER MOS 7 R FREDFET
B2FLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhance.
APT5010B2FLL - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
APT5010B2FLL
FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Static Drain-Source O.
APT5010B2LC - high voltage N-Channel enhancement mode power MOSFET
(Advanced Power Technology)
APT5010B2LC APT5010LLC
500V 47A 0.100W
POWER MOS VITM
B2LC
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancemen.
APT5010B2LL - Power MOSFET
(Advanced Power Technology)
500V 46A 0.100W
APT5010B2LL APT5010LLL
B2LL
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po.
APT5010B2LL - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
APT5010B2LL
FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Static Drain-Source On.
APT5010B2VFR - Power MOSFET
(Advanced Power Technology)
APT5010B2VFR
500V 47A 0.100Ω
POWER MOS V ®
FREDFET
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT5010B2VR - Power MOSFET
(Advanced Power Technology)
APT5010B2VR
500V 47A 0.100Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technol.