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APT8011JLL
800V 51A 0.110W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
S G D
S
SO
ISOTOP ®
2 T-
27
"UL Recognized"
• Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT8011JLL Datasheet
