* - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration D2 D4 D6
* D1
APTC60TDUM35P Datasheet (359.58 KB)
APTC60TDUM35P
Advanced Power Technology
359.58 KB
Triple dual common source super junction mosfet power module.
APTC60TDUM35P
Triple dual Common Source
Super Junction MOSFET
Power Module
D1 D3 D5 G1 G3 G5
VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc.
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