* Power MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 200kHz range - Soft recovery parallel diodes - Low diode VF
* Kelvin emitter for easy drive
* Very low stray inductance - S
APTGU30H120T3 Datasheet (343.12 KB)
APTGU30H120T3
Advanced Power Technology
343.12 KB
Full bridge.
APTGU30H120T3 www.DataSheet4U.com Full - Bridge PT IGBT Power Module 13 14 Q1 18 19 Q3 11 10 VCES = 1200V IC = 30A @ Tc = 80°C Application .
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