APTGF150DH120G Datasheet - Microsemi Corporation

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APTGF150DH120G Asymmetrical - Bridge NPT IGBT Power Module

APTGF150DH120G Asymmetrical - Bridge NPT IGBT Power Module VBUS Q1 G1 CR3 www.DataSheet4U.com VCES = 1200V IC = 150A @ Tc = 80°C Application

APTGF150DH120G_MicrosemiCorporation.pdf

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Datasheet Details

Part number:

APTGF150DH120G

Manufacturer:

Microsemi ↗ Corporation

File Size:

269.96 KB

Description:

Asymmetrical - Bridge NPT IGBT Power Module

Features

* Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
* Kelvin emitter for easy drive
* Very low stray

APTGF150DH120G Distributors

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APTGF150DH120G Asymmetrical Bridge NPT IGBT Power Module Microsemi Corporation

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