Asymmetrical Datasheet | Specifications & PDF Download

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APTGT200DH120 Asymmetrical - Bridge Fast Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 CR3 VCES = 1200V IC = 200A @ Tc = 80°C

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APTGT200DH120G Asymmetrical - Bridge Fast Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 CR3 VCES = 1200V IC = 200A @ Tc = 80°

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APTGF90DH60T3G Asymmetrical - Bridge NPT IGBT Power Module 13 14 www.DataSheet4U.com VCES = 600V IC = 90A @ Tc = 80°C Application • Welding converte

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® SSRP130B1 DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE Application Specific Discretes A.S.D.™ MAIN APPICATIONS Where asymmetrical pr

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www.vishay.com DG2020 Vishay Siliconix Low-Voltage Single Asymmetrical SPDT Analog Switch DESCRIPTION The DG2020 is a single-pole/double-throw mono

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APTGT200DH60G Asymmetrical - Bridge Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 CR3 VCES = 600V IC = 200A @ Tc = 80°C Appli

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APTGF150DH120 Asymmetrical - Bridge NPT IGBT Power Module VCES = 1200V IC = 150A @ Tc = 80°C Application • Welding converters • Switched Mode Power Su

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APTGF150DH120G Asymmetrical - Bridge NPT IGBT Power Module VBUS Q1 G1 CR3 www.DataSheet4U.com VCES = 1200V IC = 150A @ Tc = 80°C Application • Weldi

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APTGF180DH60G Asymmetrical - bridge NPT IGBT Power Module VBUS Q1 G1 CR3 www.DataSheet4U.com VCES = 600V IC = 180A @ Tc = 80°C Application • Welding

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APTGF50DH120T3G Asymmetrical - Bridge NPT IGBT Power Module 13 14 www.DataSheet4U.com VCES = 1200V IC = 50A @ Tc = 80°C Application • AC and DC moto

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APTGF50DH120TG Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 1200V IC = 50A @ Tc = 80°C Applicati

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APTGF50DH60T1G Asymmetrical - Bridge NPT IGBT Power Module VCES = 600V IC = 50A* @ Tc = 80°C www.DataSheet4U.com Application • Welding converters •

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APTGF50DH60TG Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 600V IC = 50A @ Tc = 80°C Application

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APTGF90DH60TG Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 600V IC = 90A @ Tc = 80°C Application

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APTC60DHM35T3G Asymmetrical bridge Super Junction MOSFET Power Module 13 14 Q1 CR3 VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Appl

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APTC60DHM45T1G Asymmetrical bridge Super Junction MOSFET Power Module VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Weld

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DISCONTINUED Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V(BR)DSS QG (nC) Q1 30 12.9 Q2 30 9

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Asymmetrical TVS Diode for Extended Common-Mode RS-485 PROTECTION PRODUCTS Description The SM712 transient voltage suppressor (TVS) diode is designed

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