APTGT200DH60G Datasheet - Microsemi Corporation

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APTGT200DH60G Asymmetrical - Bridge Trench Field Stop IGBT Power Module

APTGT200DH60G Asymmetrical - Bridge Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 CR3 VCES = 600V IC = 200A @ Tc = 80°C Appli.

APTGT200DH60G_MicrosemiCorporation.pdf

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Datasheet Details

Part number:

APTGT200DH60G

Manufacturer:

Microsemi ↗ Corporation

File Size:

282.75 KB

Description:

Asymmetrical - Bridge Trench Field Stop IGBT Power Module

Features

* Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
* Kelvin emitter for easy drive
* Very low str

APTGT200DH60G Distributors

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APTGT200DH60G Asymmetrical Bridge Trench Field Stop IGBT Power Module Microsemi Corporation

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