APTGT200DH120G Datasheet - Microsemi Corporation

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APTGT200DH120G Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module

APTGT200DH120G Asymmetrical - Bridge Fast Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 CR3 VCES = 1200V IC = 200A @ Tc = 80°.

APTGT200DH120G_MicrosemiCorporation.pdf

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Datasheet Details

Part number:

APTGT200DH120G

Manufacturer:

Microsemi ↗ Corporation

File Size:

283.51 KB

Description:

Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module

Features

* Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
* Kelvin emitter for easy drive
* Very lo

APTGT200DH120G Distributors

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APTGT200DH120G Asymmetrical Bridge Fast Trench Field Stop IGBT Power Module Microsemi Corporation

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