ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel MOSFET

Zetex Semiconductors

Description

DISCONTINUED Part no.ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V(BR)DSS QG (nC) Q1 30 12.9 Q2 30 9.
This new generation dual Trench MOSFET from Zetex features low on-resistance achievable with low (4. Low on-resistan.

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Datasheet Specifications

Part number: ZXMN3F318DN8
Manufacturer: Zetex Semiconductors
File Size: 401.96 KB
Datasheet: ZXMN3F318DN8-ZetexSemiconductors.pdf
Description: 30V SO8 Asymmetrical dual N-channel MOSFET

Features

* low on-resistance achievable with low (4.5V) gate drive. Features
* Low on-resistance
* 4.5V gate drive capability

Applications

* DC-DC Converters
* SMPS
* Load switching
* Motor control
* Backlighting Q2 Q1 Ordering information Device ZXMN3F318DN8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 Device marking ZXMN 3F318 Pinout
* top view Issue 1

ZXMN3F318DN8 Distributors

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ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel MOSFET Zetex Semiconductors

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