Description
ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS 30 RDS(on) (Ω) 0.047 @ VGS= 10V 0.065 @ VGS= 4.5V ID (A) 4.6 4.0 Descript.
This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.
Low on-resistance.
Features
* low onresistance achievable with 4.5V gate drive. Features
* Low on-resistance
* 4.5V gate drive capability
Applications
* DC-DC Converters
* Power management functions
* Motor Control
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G S
Ordering information
DEVICE ZXMN3F30FHTA
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
D
S
Device marking
KNA
G Top view
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
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