ZXMN3B04N8 30V N-CHANNEL MOSFET

DIODES

Description

ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE Product Summary BVDSS 30V RDS(ON) 0.025Ω@VGS = 4.5V ID TA = +25°C 8.9A Descripti.
This new generation of Trench MOSFETs from Diodes Incorporated utilizes a unique structure that combines the benefits of low onresistance with fast sw.

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Datasheet Specifications

Part number: ZXMN3B04N8
Manufacturer: DIODES ↗
File Size: 530.05 KB
Datasheet: ZXMN3B04N8-DIODES.pdf
Description: 30V N-CHANNEL MOSFET

Features

* Low On-Resistance
* Fast Switching Speed
* Low Threshold
* Low Gate Drive
* Low Profile SO-8 Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data
* Case: SO-8
* Case Material: Molde

Applications

* Applications
* DC-DC Converters
* Power Management Functions
* Disconnect Switches

ZXMN3B04N8 Distributors

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ZXMN3B04N8 30V N-CHANNEL MOSFET DIODES

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