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ZXMN3B04N8 - 30V N-CHANNEL MOSFET

ZXMN3B04N8 Description

ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE Product Summary BVDSS 30V RDS(ON) 0.025Ω@VGS = 4.5V ID TA = +25°C 8.9A Descripti.
This new generation of Trench MOSFETs from Diodes Incorporated utilizes a unique structure that combines the benefits of low onresistance with fast sw.

ZXMN3B04N8 Features

* Low On-Resistance
* Fast Switching Speed
* Low Threshold
* Low Gate Drive
* Low Profile SO-8 Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data
* Case: SO-8
* Case Material: Molde

ZXMN3B04N8 Applications

* Applications
* DC-DC Converters
* Power Management Functions
* Disconnect Switches

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30V N-CHANNEL MOSFET DIODES
DIODES ZXMN3B04N8-like datasheet