Datasheet Details
- Part number
- ZXMN3B04N8
- Manufacturer
- DIODES ↗
- File Size
- 530.05 KB
- Datasheet
- ZXMN3B04N8-DIODES.pdf
- Description
- 30V N-CHANNEL MOSFET
ZXMN3B04N8 Description
ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE Product Summary BVDSS 30V RDS(ON) 0.025Ω@VGS = 4.5V ID TA = +25°C 8.9A Descripti.
This new generation of Trench MOSFETs from Diodes Incorporated utilizes a unique structure that combines the benefits of low onresistance with fast sw.
ZXMN3B04N8 Features
* Low On-Resistance
* Fast Switching Speed
* Low Threshold
* Low Gate Drive
* Low Profile SO-8 Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
* Case: SO-8
* Case Material: Molde
ZXMN3B04N8 Applications
* Applications
* DC-DC Converters
* Power Management Functions
* Disconnect Switches
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