ZXMN10B08E6 100V N-CHANNEL MOSFET

DIODES

Description

Product Summary BVDSS 100V Max RDS(on) 230mΩ @ VGS = 10V 300mΩ @ VGS = 4.5V Max ID TA = +25C (Note 5) 1.9A 1.68A ZXMN10B08E6 100V N-CHANNEL ENHAN.
and Applications This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

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Datasheet Specifications

Part number: ZXMN10B08E6
Manufacturer: DIODES ↗
File Size: 595.69 KB
Datasheet: ZXMN10B08E6-DIODES.pdf
Description: 100V N-CHANNEL MOSFET

Features

* Low On-Resistance
* Fast Switching Speed
* Low Threshold
* Low Gate Drive
* SOT26 Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* requiring specific change control (i. e. : parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www. diodes. com/products/automotive/automotiveproducts/

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ZXMN10B08E6 100V N-CHANNEL MOSFET DIODES

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