Datasheet Details
- Part number
- ZXMN10B08E6
- Manufacturer
- DIODES ↗
- File Size
- 595.69 KB
- Datasheet
- ZXMN10B08E6-DIODES.pdf
- Description
- 100V N-CHANNEL MOSFET
ZXMN10B08E6 Description
Product Summary BVDSS 100V Max RDS(on) 230mΩ @ VGS = 10V 300mΩ @ VGS = 4.5V Max ID TA = +25C (Note 5) 1.9A 1.68A ZXMN10B08E6 100V N-CHANNEL ENHAN.
and Applications
This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.
ZXMN10B08E6 Features
* Low On-Resistance
* Fast Switching Speed
* Low Threshold
* Low Gate Drive
* SOT26 Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
ZXMN10B08E6 Applications
* requiring specific change control
(i. e. : parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www. diodes. com/products/automotive/automotiveproducts/
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