Datasheet Details
- Part number
- ZXMN10A11G
- Manufacturer
- DIODES ↗
- File Size
- 570.74 KB
- Datasheet
- ZXMN10A11G-Diodes.pdf
- Description
- 100V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN10A11G Description
ADVANCE INFORMATION ZXMN10A11G Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(on) 350mΩ @ VGS = 10V 450mΩ @ VGS = 6.0.
and Applications
This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high.
ZXMN10A11G Features
* Fast Switching Speed
* Low Gate Drive
* Low Input Capacitance
* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* Case: SOT223
* Case Material:
ZXMN10A11G Applications
* This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Motor Control
* DC-DC Converters
* Power Management Functions
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