ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

ADVANCE INFORMATION ZXMN10A11G Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(on) 350mΩ @ VGS = 10V 450mΩ @ VGS = 6.0.
and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high.

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Datasheet Specifications

Part number: ZXMN10A11G
Manufacturer: DIODES ↗
File Size: 570.74 KB
Datasheet: ZXMN10A11G-Diodes.pdf
Description: 100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Fast Switching Speed
* Low Gate Drive
* Low Input Capacitance
* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
* Case: SOT223
* Case Material:

Applications

* This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Motor Control
* DC-DC Converters
* Power Management Functions

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ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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