100V Datasheet | Specifications & PDF Download

® TDA7294S 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±45V) DMOS POWER STAGE HIGH OUTPUT POWER (100W @ THD

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25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

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SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N025 Rev. 1.1 Jul. 2021 www.su

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SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N025 Rev. 1.1 Jul. 2021 www.su

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SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N042 Rev. 0.9 Jul. 2021 www.su

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SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N042 Rev. 0.9 Jul. 2021 www.su

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MOSFET – N-Channel, POWERTRENCH) 100 V, 300 A, 2.0 mW FDBL0200N100 Features  Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A  Typical Qg(tot) = 95

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MOSFET - Power, Single N-Channel 100 V, 1.7 mW, 267 A NTMTSC1D6N10MC Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize

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MOSFET – POWERTRENCH), N-Channel 100 V, 240 A, 2.6 mW FDBL86063 DATA SHEET www.onsemi.com Features • Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 A

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www.atcsemi.com AT1045K 100V N-Channel MOSFET Features Product Summary ● Advanced high cell density Trench technology ● Super Low Gate Charge ● Ex

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SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N025 Rev. 1.1 Jul. 2021 www.su

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100V 15A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGX15N10 uses advanced SGT technology and design to provide excellent RDS(on) with low gate ch

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MOSFET – N-Channel, POWERTRENCH) 100 V, 32 A, 36 mW FDB3682, FDP3682 Features • RDS(on) = 32 mW (Typ.) @ VGS = 10 V, ID = 32 A • QG(tot) = 18.5 nC (T

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MOSFET – POWERTRENCH) N-Channel 100 V, 240 A, 4.1 mW FDBL86066-F085 Features • Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 4

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MOSFET – N-Channel, POWERTRENCH) 100 V, 61 A, 16 mW FDP3652, FDB3652 Features • RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 61 A • Qg(tot) = 41 nC (Typ

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MOSFET – N-Channel, POWERTRENCH) 100 V, 300 A, 2.0 mW FDBL86062-F085 Features • Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) =

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100V, 90A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGM107R7T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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MOSFET – N-Channel, POWERTRENCH) 100 V, 240 A, 2.6 mW FDBL86063-F085 Features • Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 7

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N-Channel Shielded Gate POWERTRENCH) MOSFET 100 V, 1.7 mW, 268 A FDB1D7N10CL7 Description This N−Channel MOSFET is produced using onsemi’s advanced P

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100V, 120A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGX105R5T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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