.
Alpha & Omega Semiconductors
AOD2910 - 100V N-Channel MOSFET
AOD2910 100V N-Channel MOSFET General Description The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient .
Silan Microelectronics
SVG104R5NT - 100V N-CHANNEL MOSFET
Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem.
Silan Microelectronics
SBD10C100F - 100V SCHOTTKY RECTIFIER
SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech.
CRM
CRSS028N10N - 100V SkyMOS1 N-MOSFET
() CRST030N10N,CRSS028N10N SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(.
Alpha & Omega Semiconductors
AOD4286 - 100V N-Channel MOSFET
AOD4286/AOI4286 100V N-Channel MOSFET General Description Product Summary The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optim.
UTC
15N10 - 100V (D-S) N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 15N10 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N10 is an N-Channel enhancement MOSFET, it uses .
CRM
CRST030N10N - 100V SkyMOS1 N-MOSFET
() CRST030N10N,CRSS028N10N SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(.
Silan Microelectronics
SVG104R5NS - 100V N-CHANNEL MOSFET
Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem.
Alpha & Omega Semiconductors
AOD482 - 100V N-Channel MOSFET
AOD482/AOI482 100V N-Channel MOSFET General Description The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to.
OCX
OC5800L - 100V/5A MOS Wide Input Voltage Step-Down DC-DC
： 0755-83777847 QQ:1419537802 OC5800L 100V/5A MOS DC-DC OC5800L DC-DC， 100V/5A MOS， 90V。OC5800L 、、、 。 ， 2A 。 OC5800L 。 OC5800L PWM ， 14.
Alpha & Omega Semiconductors
AOD2922 - 100V N-Channel AlphaMOS
AOD2922 100V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS MV) technology • Very Low RDS(ON) • Low Gate Charge • Optimi.
ST Microelectronics
TDA7294S - 100V - 100W DMOS AUDIO AMPLIFIER
® TDA7294S 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±45V) DMOS POWER STAGE HIGH OUTPUT POWER (100W @ THD .
Pan Jit International
PJD10P10A - 100V P-Channel Enhancement Mode MOSFET
PPJD10P10A 100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -10 A Features RDS(ON), VGS@-10V,ID@-5A<210mΩ RDS(ON), VGS@-4.5V,ID@-.
Fairchild Semiconductor
FQT7N10L - 100V LOGIC N-Channel MOSFET
FQT7N10L May 2001 QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are .
Alpha & Omega Semiconductors
AOD4126 - 100V N-Channel MOSFET
AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines exc.
Silan Microelectronics
SBD20C100T - 100V SCHOTTKY RECTIFIER
SBD20C100T/F_Datasheet 20A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD20C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech.
JoulWatt
JWH5140 - 100V/0.6A Synchronous Step-Down Converter
JWH5140/JWH5140F 100V/0.6A Synchronous Step-Down Converter DESCRIPTION The JWH5140 and JWH5140F is a monolithic buck switching regulator based on co.
natlinear
LN2544 - 100V Input Universal High Brightness LED Driver
LN2544 100V Input Universal High Brightness LED Driver ■ General Description LN2544 is an open loop, current mode ， built-in NMOSFET, control LED dr.
PFC Device
PTR20100CT - 20A 100V HPTR Schottky Rectifier
PFC Device Corporation PTR20100CT PTR20100CTF PTR20100CTI PTR20100CTB 20A 100V HPTR® Schottky Rectifier Major ratings and characteristics Characte.
Fairchild Semiconductor
FQP22P10 - 100V P-Channel MOSFET
FQP22P10 QFET FQP22P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using F.