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PW016N10TS - 100V 300A N-MOSFET

Key Features

  • Beneficts.
  • Uses PingWei advanced PerfectMOS5 technology.
  • High robustness and reliability.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Excellent Low Ciss.
  • Increases maximum current capability.
  • Low power loss, high power density.
  • Easy paralleling.
  • Qualified according to JEDEC criteria.

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Datasheet Details

Part number PW016N10TS
Manufacturer PINGWEI
File Size 1.37 MB
Description 100V 300A N-MOSFET
Datasheet download datasheet PW016N10TS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PW016N10TS Perfect MOS5 N-MOSFET 100V, 1.3mΩ, 300A Features Beneficts • Uses PingWei advanced PerfectMOS5 technology • High robustness and reliability • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Excellent Low Ciss • Increases maximum current capability • Low power loss, high power density • Easy paralleling • Qualified according to JEDEC criteria Applications • Synchronous Rectification for AC/DC Quick Charger • Battery management • UPS (Uninterrupible Power Supplies) 100% DVDS Tested 100% AvalancheTested Product Summary VDS RDS(on)@10V typ ID 100V 1.